MJ13334

SWITCHMODE SERIES NPN SILICON TRANSISTORS

SWITCHMODESERIESNPNSILICONTRANSISTORS …designedforhigh-voltage,high-speed,powerswitchingininductivecircuitswherefalltimeiscritical,Theyareparticularlysuitedforlineoperatedswitchmodeapplicationssuchas: *SwitchingRegulators *Inverters *Solenoidandrelaydrivers

MJ13335

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterSustainingVoltage-:VCEO(SUS)=500V(Min) ·HighSwitchingSpeed APPLICATIONS ·Designedforhigh-voltage,high-speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperatedswitchmodeapplicati

MJ13335

SWITCHMODE SERIES NPN SILICON TRANSISTORS

SWITCHMODESERIESNPNSILICONTRANSISTORS …designedforhigh-voltage,high-speed,powerswitchingininductivecircuitswherefalltimeiscritical,Theyareparticularlysuitedforlineoperatedswitchmodeapplicationssuchas: *SwitchingRegulators *Inverters *Solenoidandrelaydrivers

MJ1-3510-SMT-TR

AUDIO JACK

FEATURES •3.5mm •rightangle •reflowsoldercompatible •surfacemount

MJ14001

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-CurrentComplementarySiliconPowerTransistors ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications, •HighCurrentCapability—ICContinuous=60Amperes •DCCurrentGain—hFE=15–100@IC=50Adc •LowCollector–EmitterSaturationVoltage—

MJ14001

COMPLEMENTARY SILICON POWER TRANSITORS

Designedforuseinhigh−poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability−ICContinuous=60Amperes •DCCurrentGain−hFE=15−100@IC=50Adc •LowCollector−EmitterSaturationVoltage−VCE(sat)=2.5Vdc(Max) @IC=50Adc •Pb−FreePa

MJ14002

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-CurrentComplementarySiliconPowerTransistors ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications, •HighCurrentCapability—ICContinuous=60Amperes •DCCurrentGain—hFE=15–100@IC=50Adc •LowCollector–EmitterSaturationVoltage—

MJ14002

COMPLEMENTARY SILICON POWER TRANSITORS

Designedforuseinhigh−poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability−ICContinuous=60Amperes •DCCurrentGain−hFE=15−100@IC=50Adc •LowCollector−EmitterSaturationVoltage−VCE(sat)=2.5Vdc(Max) @IC=50Adc •Pb−FreePa

MJ14003

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-CurrentComplementarySiliconPowerTransistors ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications, •HighCurrentCapability—ICContinuous=60Amperes •DCCurrentGain—hFE=15–100@IC=50Adc •LowCollector–EmitterSaturationVoltage—

MJ14003

COMPLEMENTARY SILICON POWER TRANSITORS

Designedforuseinhigh−poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability−ICContinuous=60Amperes •DCCurrentGain−hFE=15−100@IC=50Adc •LowCollector−EmitterSaturationVoltage−VCE(sat)=2.5Vdc(Max) @IC=50Adc •Pb−FreePa