首页 >MJ1>规格书列表

零件型号下载 订购功能描述制造商 上传企业LOGO

MJ11032

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJ11032

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJ11032

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJ11032

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

WINGSWing Shing Computer Components

永盛电子永盛电子(香港)有限公司

MJ11032

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

SEME-LAB

Seme LAB

MJ11032

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJ11032

Silicon PNP Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=120V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=25A :hFE=400(Min.)@IC=50A •ComplementtothePNPMJ11033 APPLICATIONS •Designedforuseasoutputdevicesincomplementary generalpurposeamplifierappl

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

MJ11033

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJ11033

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MJ11033

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

技术参数

  • Case:

    TO-3

  • Configuration/ Description:

    NPN Darlington

  • Polarity:

    NPN

  • IC MAX:

    8A

  • PD MAX:

    90W

  • VCEO MAX:

    60V

  • hFE MIN:

    1000

  • @VCE:

    2V

  • VCE(SAT) MAX:

    2V

  • @IC:

    3A

  • @IB:

    12mA

供应商型号品牌批号封装库存备注价格
MOT
24+
50
询价
MOT/ON
24+
TO-3
2500
原装现货假一罚十
询价
16+
TO-3
10
全新原装现货
询价
ON/ST
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
询价
ISC
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MOT
23+
TO3
8650
受权代理!全新原装现货特价热卖!
询价
MOT/ON
专业铁帽
TO-3
2500
原装铁帽专营,代理渠道量大可订货
询价
ON
12+
TO-3
2500
原装现货/特价
询价
MOT/ON
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
更多MJ1供应商 更新时间2025-7-29 15:30:00