P沟道增强型场效应晶体管

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SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF49

文件：205.79 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz

文件：119.6 Kbytes 页数：5 Pages

MITSUBISHI

三菱电机

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05563 Mbytes 页数：9 Pages

VBSEMI

微碧半导体