SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)

DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB (Typ.) MGF49

文件：205.79 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

Low Noise GaAs HEMT

文件：141.84 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

低噪声GaAs HEMT

MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz

文件：119.6 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

Dual P-Channel 30-V (D-S) MOSFET

文件：1.05563 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET

文件：570.82 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体