SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz

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MITSUBISHI

三菱电机

Low Noise GaAs HEMT

文件：159.83 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

High Frequency Devices-GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4953B

MITSUBISHI

三菱电机

Dual P -Channel E nhancement Mode F ield E ffect Transistor

Features Surface Mount Package. Super high dense cell design for low RDS (ON). Rugged and reliable.

文件：358.43 Kbytes 页数：5 Pages

SAMHOP

三合微科

Dual P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

文件：65.47 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual P-Channel Enhancement Mode MOSFET

General Description These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery po

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FAIRCHILD

仙童半导体