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SI4953DY

Dual P-Channel Enhancement Mode MOSFET

General Description These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery po

文件:427 Kbytes 页数:6 Pages

Fairchild

仙童半导体

SI4953DY

Dual P-Channel 30-V(D-S) MOSFET

Dual P-Channel 30-V(D-S) MOSFET FEATURES • 100 Rg Tested

文件:43.32 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

SI4953DY

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON)

文件:1.35261 Mbytes 页数:4 Pages

KEXIN

科信电子

SI4953DY-HF

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON)

文件:1.4606 Mbytes 页数:4 Pages

KEXIN

科信电子

SI4953DY-T1

Dual P-Channel 30-V(D-S) MOSFET

Dual P-Channel 30-V(D-S) MOSFET FEATURES • 100 Rg Tested

文件:43.32 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

SI4953DY-T1-E3

Dual P-Channel 30-V (D-S) MOSFET

文件:1.0558 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

Si4953DY

30-V (D-S) Dual

Vishay

威世

SI4953DY

Dual P-Channel Enhancement Mode MOSFET

ONSEMI

安森美半导体

详细参数

  • 型号:

    SI4953DY

  • 功能描述:

    MOSFET SO8 DUAL PCH

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
SILICONIX
24+
SOP-8P
3000
自己现货
询价
VISHA
23+
SOP-8
5600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
SI
25+
8P
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
SILICONIX
100
全新原装 货期两周
询价
FSC/ON
23+
原包装原封 □□
14801
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
询价
VISHAY
20+
SOP8
2960
诚信交易大量库存现货
询价
VISHAY
24+
SMD8
35200
一级代理分销/放心采购
询价
FAIRCHILD
1709+
SOP8
45000
普通
询价
SIL
2447
SOIC
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多SI4953DY供应商 更新时间2025-12-24 9:34:00