Super Low Noise InGaAs HEMT

文件：33.66 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

Super Low Noise InGaAs HEMT

MITSUBISHI

三菱电机

Super Low Noise InGaAs HEMT

文件：33.66 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

Super Low Noise InGaAs HEMT

DESCRIPTION\nThe MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.FEATURES\nLow noise figure Low noise figure @ f=12GHz\n  MGF4316G : NF min.=0.80dB (MAX.)\n  MGF4319G : NF min.=0.50dB (MAX.)\nHigh associated gain\n  Gs=12.0 dB (MIN.) @ f=12GHzAPPLICATION\nL to K band low noise amplifiers.;

MinebeaMitsumi

美蓓亚三美