UHF BAND GaAs POWER AMPLIFIER

DESCRIPTION The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency :

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Mitsubishi

三菱电机

UHF BAND GaAs POWER AMPLIFIER

DESCRIPTION\nThe MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.FEATURES\n   Low voltage operation :\n      Vd=3.0V\n   High output power :\n      Po=28dBm typ. @f=1.85~1.91GHz\n   Low distortion :\n      ACP=-46dBc max. @Po=28dBm\n   High efficiency :\n       Low voltage operation :\n      Vd=3.0V\n   High output power :\n      Po=28dBm typ. @f=1.85~1.91GHz\n   Low distortion :\n      ACP=-46dBc max. @Po=28dBm\n   High efficiency :\n      Id=520mA typ. @Po=28dBm\n   Small size :\n      7.0 x 6.1 x 1.1 mm\n   Surface mount package\n   2 Stage Amplifier;

MITSUBISHI

三菱电机

Integrated Circuit Audio Power Amplifier, 32W

Description: The NTE7169 is a monolithic integrated circuit in a 5-Lead TO220 type package intended for use as an audio class AB audio amplifier. Thanks to its high power capability, the NTE7169 is able to provide up to 35W true RMS power into a 4Ω load (THD = 10, VS = ±18V, f = 1kHz) and up to

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NTE

50 Ohm 2.92mm SPST PIN Diode Switch Operating From 500 MHz to 40 GHz Up To 20 dBm

文件：268.52 Kbytes 页数：3 Pages

PASTERNACK