1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFL45V1920 is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES (TARGET) Class A operation Internally matched to 50(ohm) system

文件：301.75 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：50.57 Kbytes 页数：1 Pages

MITSUBISHI

三菱电机

1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：251.05 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：251.05 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1.9-2.0 GHz BAND / 32W

文件：124.45 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1.9-2.0 GHz BAND / 32W

文件：124.45 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET

MITSUBISHI

三菱电机