2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES ● Class A operation ● Internally matched to 50 (Ω) system ● High output

文件：25.84 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

MITSUBISHI

三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：48.78 Kbytes 页数：1 Pages

Mitsubishi

三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：237.09 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET

DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system Hi

文件：237.09 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

2.1-2.3 GHz BAND / 32W

文件：118.66 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

2.1-2.3 GHz BAND / 32W

文件：118.66 Kbytes 页数：2 Pages

Mitsubishi

三菱电机

2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET

MITSUBISHI

三菱电机