isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 7A, 1.15(ohm)

文件：745.05 Kbytes 页数：6 Pages

MGCHIP

600V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 600V, 7A, 1.15(ohm)

文件：983.96 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

文件：1.2947 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

文件：1.2947 Mbytes 页数：8 Pages

MGCHIP