N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

文件：1.2947 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 600V, 7.0A, 1.15(ohm)

文件：1.2947 Mbytes 页数：8 Pages

MGCHIP

600V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 600V, 7A, 1.15(ohm)

文件：983.96 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.52 Kbytes 页数：2 Pages

ISC

无锡固电

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件：122.09 Kbytes 页数：6 Pages

Motorola

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