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MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:118.14 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:122.09 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MGP7N60ED

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

文件:144.18 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MGP7N60E

Insulated Gate Bipolar Transistor

ONSEMI

安森美半导体

详细参数

  • 型号:

    MGP7N60E

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    ONS

  • 功能描述:

    ON SEMICONDUCTOR NXA5C

  • 制造商:

    ON Semiconductor

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
TO
6000
十年配单,只做原装
询价
24+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择
询价
ON/安森美
22+
TO
100556
询价
ON
25+
TO
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ON
24+
90000
询价
ON/安森美
23+
TO
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
RAYCHEM
24+
SMD
5000
全现原装公司现货
询价
TE
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
询价
TE/泰科
2508+
/
473077
一级代理,原装现货
询价
SMC
2408+
NA
6680
优势代理渠道 原装现货 可全系列订货
询价
更多MGP7N60E供应商 更新时间2025-12-1 14:02:00