MGP7N60E中文资料安森美半导体数据手册PDF规格书

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. This new E–series introduces an energy efficient, ESD protected, and short circuit rugged device.

• Industry Standard TO–220 Package

• High Speed: Eoff = 70 μJ/A typical at 125°C

• High Voltage Short Circuit Capability – 10 s minimum at 125°C, 400 V

• Low On–Voltage 2.0 V typical at 5.0 A, 125°C

• Robust High Voltage Termination

• ESD Protection Gate–Emitter Zener Diodes