Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package)

. . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. • C

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Motorola

摩托罗拉

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

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安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

文件：69.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

文件：69.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr

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Motorola

摩托罗拉

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：63.3 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 40 VOLTS Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for l

文件：56.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

文件：184.62 Kbytes 页数：5 Pages

ONSEMI

安森美半导体