Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

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安森美半导体

Package：DO-214AA，SMB；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 1A SMB

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安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

文件：69.54 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE − 40 VOLTS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; fre

文件：99.14 Kbytes 页数：8 Pages

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安森美半导体

Surface Mount Schottky Power Rectifier

文件：64.2 Kbytes 页数：5 Pages

ONSEMI

安森美半导体