丝印：K24L；Package：SOD-123FL；LOW VF S URFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Plastic package has Underwriters Laboratory Flammability classification 94V-0 Utilizing Fame Retardant Epoxy Molding Compound For surface mount applications Low leakage current.

文件：1.17552 Mbytes 页数：3 Pages

SY

顺烨电子

2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss Fast Switching Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：53.59 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

2A, 32V, 330KHz Step-Down Converter

文件：254.48 Kbytes 页数：11 Pages

MPS

美国芯源

1.2 A, 20 V, 700 kHz/1.4 MHz, Nonsynchronous Step-Down Regulator

GENERAL DESCRIPTION The ADP2300/ADP2301 are compact, constant-frequency, current-mode, step-down dc-to-dc regulators with integrated power MOSFET. The ADP2300/ADP2301 devices run from input voltages of 3.0 V to 20 V, making them suitable for a wide range of applications. A precise, low voltage in

文件：690.42 Kbytes 页数：28 Pages

AD

亚德诺

2.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Forward Voltage Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss Fast Switching Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

文件：53.59 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：285.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package

These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection dio

文件：285.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier(SMB Power Surface Mount Package)

文件：121.54 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Surface Mount Schottky Power Rectifier

文件：106.87 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：58.61 Kbytes 页数：4 Pages

ONSEMI

安森美半导体