首页 >MBRD1035C>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBRD1035C

Schottky Diodes

文件:1.24189 Mbytes 页数:3 Pages

KEXIN

科信电子

MBRD1035CTL

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

文件:63.87 Kbytes 页数:3 Pages

DIODES

美台半导体

MBRD1035CTL

SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package

SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol

文件:158.19 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MBRD1035CTL

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:104.04 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1035CTL

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTL_V01

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

Schottky Power Rectifier, Switch Mode, 10 A, 35 V

The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin

文件:231.35 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBRD1035CTLG

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:120.16 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBRD1035CTL-T

10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma

文件:63.87 Kbytes 页数:3 Pages

DIODES

美台半导体

MBRD1035CTLT4

SWITCHMODE Schottky Power Rectifier

Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo

文件:104.04 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    35

  • VF Max (V):

    0.56

  • IRM Max (µA):

    2000

  • IO(rec) Max (A):

    10

  • IFSM Max (A):

    50

  • Package Type:

    DPAK-3

供应商型号品牌批号封装库存备注价格
ON/安森美
2022+
TO-252
953
原厂代理 终端免费提供样品
询价
SOT-252
23+
10
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON/安森美
2022+
TO-252
30000
进口原装现货供应,绝对原装 假一罚十
询价
ON/安森美
20+
TO-252
953
现货很近!原厂很远!只做原装
询价
ONSEMICONDUC
05+
原厂原装
6116
只做全新原装真实现货供应
询价
ON
1415+
TO-252
28500
全新原装正品,优势热卖
询价
ON
24+/25+
395
原装正品现货库存价优
询价
ON
25+
to-252
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
ON
17+
TO-252
6200
100%原装正品现货
询价
ON
24+
SOT-252
1387
原装深圳现货特价
询价
更多MBRD1035C供应商 更新时间2025-10-6 14:04:00