型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
MBRD1035C | Schottky Diodes 文件:1.24189 Mbytes 页数:3 Pages | KEXIN 科信电子 | KEXIN | |
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma 文件:63.87 Kbytes 页数:3 Pages | DIODES 美台半导体 | DIODES | ||
SWITCHMODE??Schottky Rectifier D2PAK Power Surface Mount Package SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vol 文件:158.19 Kbytes 页数:6 Pages | Motorola 摩托罗拉 | Motorola | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo 文件:104.04 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin 文件:231.35 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin 文件:231.35 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Schottky Power Rectifier, Switch Mode, 10 A, 35 V The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheelin 文件:231.35 Kbytes 页数:7 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo 文件:120.16 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • Very Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, OR’ing, and Polarity Protection Applications • Plastic Material: UL Flamma 文件:63.87 Kbytes 页数:3 Pages | DIODES 美台半导体 | DIODES | ||
SWITCHMODE Schottky Power Rectifier Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited fo 文件:104.04 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI |
技术参数
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Configuration:
Common Cathode
- VRRM Min (V):
35
- VF Max (V):
0.56
- IRM Max (µA):
2000
- IO(rec) Max (A):
10
- IFSM Max (A):
50
- Package Type:
DPAK-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
2022+ |
TO-252 |
953 |
原厂代理 终端免费提供样品 |
询价 | ||
SOT-252 |
23+ |
10 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON/安森美 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
ON/安森美 |
20+ |
TO-252 |
953 |
现货很近!原厂很远!只做原装 |
询价 | ||
ONSEMICONDUC |
05+ |
原厂原装 |
6116 |
只做全新原装真实现货供应 |
询价 | ||
ON |
1415+ |
TO-252 |
28500 |
全新原装正品,优势热卖 |
询价 | ||
ON |
24+/25+ |
395 |
原装正品现货库存价优 |
询价 | |||
ON |
25+ |
to-252 |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ON |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
询价 | ||
ON |
24+ |
SOT-252 |
1387 |
原装深圳现货特价 |
询价 |
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