MBRD1035CTL_V01中文资料安森美半导体数据手册PDF规格书

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection diodes.

特性 Features

• Highly Stable Oxide Passivated Junction

• Guardring for Stress Protection

• Matched Dual Die Construction −

May be Paralleled for High Current Output

• High dv/dt Capability

• Short Heat Sink Tap Manufactured − Not Sheared

• Very Low Forward Voltage Drop

• Epoxy Meets UL 94 V−0 @ 0.125 in

• SBRD8 and NRVBD Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 Gram (Approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• ESD Rating:

♦ Human Body Model = 3B (> 8 kV)

♦ Machine Model = C (> 400 V)