SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：92.39 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：39.46 Kbytes 页数：2 Pages

HY

虹扬科技

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl

文件：484.28 Kbytes 页数：5 Pages

AITSEMI

创瑞科技

Schottky Diodes

■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

文件：693.88 Kbytes 页数：2 Pages

KEXIN

科信电子

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

文件：84.6 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

文件：288.24 Kbytes 页数：2 Pages

DCCOM

道全

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

FEATURES * Plastic case with heatsink for Maximum Heat Dissipation * Diffused Junction * High current capability * Surge overload ratings - 300 Amperes * Low forward voltage drop * High Reliability

文件：288.24 Kbytes 页数：2 Pages

DCCOM

道全