Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

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ONSEMI

安森美半导体

Package：DO-204AL，DO-41，轴向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 1A AXIAL

ONSEMI

安森美半导体

Schottky Rectifier, 1 A

文件：120.8 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

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VishayVishay Siliconix

威世威世科技公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：216.05 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体