Schottky Diodes

■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

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KEXIN

科信电子

DIODES

AiT-Semi

创瑞科技

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

文件：67.47 Kbytes 页数：5 Pages

ONSEMI

安森美半导体