MASTERGAN4

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs; • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: \n •QFN 9 x 9 x 1 mm package \n •RDS(ON) = 225 mΩ \n •IDS(MAX) = 6.5 A \n• Reverse current capability \n• Zero reverse recovery loss \n• UVLO protection on low-side and high-side \n• Internal bootstrap diode \n• Interlocking function \n• Dedicated pin for shut down functionality• Accurate internal timing match \n• 3.3 V to 15 V compatible inputs with hysteresis and pull-down \n• Over temperature protection \n• Bill of material reduction \n• Very compact and simplified layout \n• Flexible, easy and fast design.;

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.\n\n The MASTERGAN4 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.\n\n The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.\n\n The MASTERGAN4 operates in the industrial temperature range, -40°C to 125°C.\n\n The device is available in a compact 9x9 mm QFN package.\n\n

MASTERGAN4

High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features •600Vsystem-in-packageintegratinghalf-bridgegatedriverandhigh-voltage GaNpowertransistors: –QFN9x9x1mmpackage –RDS(ON)=225mΩ –IDS(MAX)=6.5A •Reversecurrentcapability •Zeroreverserecoveryloss •UVLOprotectiononlow-sideandhigh-side •Internal

MASTERGAN4

Package：31-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：HIGH POWER DENSITY 600V HALF BRI

MASTERGAN4L

600 V half-bridge enhancement mode GaN HEMT with high voltage driver; • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: \n •QFN 9 x 9 x 1 mm package \n •RDS(ON) = 225 mΩ \n •IDS(MAX) = 6.5 A \n• Reverse current capability \n• Zero reverse recovery loss \n• UVLO protection on VCC \n• Internal bootstrap diode \n• Interlocking function \n• Dedicated pin for shutdown functionality• Accurate internal timing match \n• 3.3 V to 15 V compatible inputs with hysteresis and pull-down \n• Overtemperature protection \n• Bill of material reduction \n• Very compact and simplified layout \n• Flexible, easy and fast design. \n• Ultra short wake up time, less than 200 ns;

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.\n\n The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. \n\n The MASTERGAN4L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.\n\n The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units.\n\n The MASTERGAN4L operates in the industrial temperature range, -40°C to 125°C.\n\n The device is available in a compact 9x9 mm QFN package. \n\n

MASTERGAN4TR

High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features •600Vsystem-in-packageintegratinghalf-bridgegatedriverandhigh-voltage GaNpowertransistors: –QFN9x9x1mmpackage –RDS(ON)=225mΩ –IDS(MAX)=6.5A •Reversecurrentcapability •Zeroreverserecoveryloss •UVLOprotectiononlow-sideandhigh-side •Internal