High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal

文件：396.45 Kbytes 页数：14 Pages

STMICROELECTRONICS

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High power density 600V half-bridge driver with two enhancement mode GaN Power HEMT

Features • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: – QFN 9 x 9 x 1 mm package – RDS(ON) = 225 mΩ – IDS(MAX) = 6.5 A • Reverse current capability • Zero reverse recovery loss • UVLO protection on low-side and high-side • Internal

文件：396.45 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

High power density 600V half-bridge driver with two enhancement mode GaN HEMTs

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can b • 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors: \n •QFN 9 x 9 x 1 mm package \n •RDS(ON) = 225 mΩ \n •IDS(MAX) = 6.5 A \n• Reverse current capability \n• Zero reverse recovery loss \n• UVLO protection on low-side and high-side \n• Internal bootst;

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Package：31-VQFN 裸露焊盘；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 全半桥驱动器 描述：HIGH POWER DENSITY 600V HALF BRI

STMICROELECTRONICS

意法半导体

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.\n\n The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate dri • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: \n •QFN 9 x 9 x 1 mm package \n •RDS(ON) = 225 mΩ \n •IDS(MAX) = 6.5 A \n• Reverse current capability \n• Zero reverse recovery loss \n• UVLO protection on VCC \n• Internal bootstrap diode \n• Inter;

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意法半导体