600 V half-bridge enhancement mode GaN HEMT with high voltage driver

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.\n\n The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate dri • 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors: \n •QFN 9 x 9 x 1 mm package \n •RDS(ON) = 225 mΩ \n •IDS(MAX) = 6.5 A \n• Reverse current capability \n• Zero reverse recovery loss \n• UVLO protection on VCC \n• Internal bootstrap diode \n• Inter;

ST

意法半导体

SMD

M/A-COM

上传：深圳市科恒伟业电子有限公司

MACOM

上传：兆亿微波(北京)科技有限公司

MACOM

上传：兆亿微波(北京)科技有限公司

国产代替

上传：深圳市瀚珑科技有限公司