MASTERGAN4L中文资料600 V half-bridge enhancement mode GaN HEMT with high voltage driver数据手册ST规格书

描述 Description

The MASTERGAN4L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have respectively RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN4L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units.

The MASTERGAN4L operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

特性 Features

• 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
•QFN 9 x 9 x 1 mm package
•RDS(ON) = 225 mΩ
•IDS(MAX) = 6.5 A
• Reverse current capability
• Zero reverse recovery loss
• UVLO protection on VCC
• Internal bootstrap diode
• Interlocking function
• Dedicated pin for shutdown functionality
• Accurate internal timing match
• 3.3 V to 15 V compatible inputs with hysteresis and pull-down
• Overtemperature protection
• Bill of material reduction
• Very compact and simplified layout
• Flexible, easy and fast design.
• Ultra short wake up time, less than 200 ns