MASTERGAN4中文资料High power density 600V half-bridge driver with two enhancement mode GaN HEMTs数据手册ST规格书

描述 Description

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN4 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

The extended range of the input pins allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.

The MASTERGAN4 operates in the industrial temperature range, -40°C to 125°C.

The device is available in a compact 9x9 mm QFN package.

特性 Features

• 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
•QFN 9 x 9 x 1 mm package
•RDS(ON) = 225 mΩ
•IDS(MAX) = 6.5 A
• Reverse current capability
• Zero reverse recovery loss
• UVLO protection on low-side and high-side
• Internal bootstrap diode
• Interlocking function
• Dedicated pin for shut down functionality
• Accurate internal timing match
• 3.3 V to 15 V compatible inputs with hysteresis and pull-down
• Over temperature protection
• Bill of material reduction
• Very compact and simplified layout
• Flexible, easy and fast design.

简介

MASTERGAN4属于集成电路（IC）的全半桥驱动器。由制造生产的MASTERGAN4全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。