QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

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QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

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丝印：74HC126；Package：S014；Quad bus buffer (3-state)

Features • High-speed: tPD = 8 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 4 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min) • Symmetrical output impedance: |IOH| = IOL = 6 mA (min.) • Balanced propagation delays: tPLH ≅ tPHL • Wide operating vo

文件：510.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

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丝印：HC126；Package：TSSOP14；Quad bus buffer (3-state)

Features • High-speed: tPD = 8 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 4 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min) • Symmetrical output impedance: |IOH| = IOL = 6 mA (min.) • Balanced propagation delays: tPLH ≅ tPHL • Wide operating vo

文件：510.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：184.67 Kbytes 页数：10 Pages

STMICROELECTRONICS

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丝印：74HC126Y；Package：SO14(automotivegrade)；Quad bus buffer (3-state)

Features • High-speed: tPD = 8 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 4 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min) • Symmetrical output impedance: |IOH| = IOL = 6 mA (min.) • Balanced propagation delays: tPLH ≅ tPHL • Wide operating vo

文件：510.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体