COMBINED SINGLE CHIP PCM CODEC AND FILTER

DESCRIPTION The M5913 is fully integrated PCM (pulse code modulation) codecs and transmit/receive filter us ing CMOS silicon gate technology. The primary applications for the M5913 are telephone systems : - Switching - M5913-Digital PBX’s and Central Office Switching Systems - Con

文件：220.89 Kbytes 页数：17 Pages

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COMBINED SINGLE CHIP PCM CODEC AND FILTER

DESCRIPTION The M5913 is fully integrated PCM (pulse code modulation) codecs and transmit/receive filter us ing CMOS silicon gate technology. The primary applications for the M5913 are telephone systems : - Switching - M5913-Digital PBX’s and Central Office Switching Systems - Con

文件：220.89 Kbytes 页数：17 Pages

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LAN Transceiver

Description The M59330P is an integrated circuit for two-line LAN transceivers, conforming to J1850 specifications. The chip incorporates bus line anomaly detection functions; anomalous behavior causes the ERR signal to go to L. A selector causes a normal bus signal to be output to RX. By

文件：219.19 Kbytes 页数：11 Pages

RENESAS

瑞萨

1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be pro

文件：181.03 Kbytes 页数：24 Pages

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1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be pro

文件：181.03 Kbytes 页数：24 Pages

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1 Mbit 64Kb x16, Burst Low Voltage Flash Memory

DESCRIPTION The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be pro

文件：181.03 Kbytes 页数：24 Pages

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8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：267.87 Kbytes 页数：37 Pages

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8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：267.87 Kbytes 页数：37 Pages

STMICROELECTRONICS

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8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：267.87 Kbytes 页数：37 Pages

STMICROELECTRONICS

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8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：267.87 Kbytes 页数：37 Pages

STMICROELECTRONICS

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