M59DR008E资料datasheet下载库存现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M59DR008E	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E100N1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E100N6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E100ZB1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E100ZB6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E120N1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E120N6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E120ZB1T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E120ZB6T	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008EN	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

详细参数

型号：
M59DR008E
制造商：
STMICROELECTRONICS
制造商全称：
STMicroelectronics
功能描述：
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M59DR008E		24+		3000	公司存货	询价
深圳市弘为电子有限公司	M59DR008E	ST	24+	BGA	2211	原装现货假一罚十	询价
齐创科技(上海,北京,青岛)有限公司	M59DR008E120ZB6	ST	23+	BGA	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	M59DR008E120ZB6	ST	24+	BGA	5632	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市鹏和科技有限公司	M59DR008E120N6T	ST	24+	SOP	5000	只做原装公司现货	询价
深圳市佳鑫美电子科技有限公司	M59DR008E-120ZB6ES	ST	25+	BGA-48	2987	只售原装自家现货!诚信经营!欢迎来电!	询价
深圳市华斯顿科技有限公司	M59DR008E120N6T	ST	25+23+	SOP	22003	绝对原装正品全新进口深圳现货	询价
艾睿（深圳）半导体有限公司	M59DR008E120N6	ST	2447	TSOP	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	M59DR008E120ZB6	ST/意法	23+	BGA	50000	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	M59DR008E120N6T	ST	22+	SOP	6000	十年配单,只做原装	询价

更多M59DR008E供应商更新时间2026-3-12 16:00:00

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