首页 >M59DR008E100ZB1T>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
M59DR008E100ZB1T | 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
MIT | MIT 上传：深圳市景鹏达电子有限公司 | MIT | ||
RENESAS | RENESAS | |||
RENESAS | RENESAS |
详细参数
- 型号：
M59DR008E100ZB1T
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
ST |
24+ |
TSSOP |
3000 |
公司存货 |
询价 | ||
ST |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ST |
24+ |
SOP |
5000 |
只做原装公司现货 |
询价 | ||
ST |
25+23+ |
SOP |
22003 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST |
SOP |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ST |
23+ |
SOP |
6000 |
原装正品，支持实单 |
询价 | ||
ST |
22+ |
SOP |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
24+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
更多M59DR008E100ZB1T供应商
更新时间2025-10-4 11:10:00
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