M59BW10225N1T中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The M59BW102 is a non-volatile memory that may be erased electrically at the chip level and programmed in-system on a Word-by-Word basis using only a single 3V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The device can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature, Programming and Chip Erase are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The M59BW102 features an interleaved access modality which allows extremely fast access time. The device is offered in TSOP40 (10 x 14mm) package.

■ 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ SEQUENTIAL CYCLE TIME: 25ns

■ RANDOM ACCESS TIME

■ PROGRAMMING TIME: 10µs typical

■ INTERLEAVED ACCESS TIME: 16ns

■ CONTINUOUS MEMORY INTERLEAVING

– Unlimited Linear Access Data Output

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Program Word-by-Word

– Status Register bits

■ LOW POWER CONSUMPTION

– Stand-by and Automatic Stand-by

■ 100,000 PROGRAM/ERASE CYCLES

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: C1h