丝印：M4；Package：DO-214AC；Surface Mount General Purpose Rectifier M1G Through M7G

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.3526 Mbytes 页数：3 Pages

RFE

RFE international

丝印：M4；Package：SMAF；Surface Mount General Purpose Silicon Rectifiers

文件：472.54 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：MDDM4；Package：DO-214AC；SURFACE MOUNT GENERAL RECTIFIER

文件：580.69 Kbytes 页数：3 Pages

CHENDA

辰达半导体

DIL Pitch Terminals .High Sensitivity

文件：365.71 Kbytes 页数：1 Pages

HUAXINAN

华兴安

丝印：M4；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M4；Package：SOT-323；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage VCEO=-50V. ● Excellent HFE Linearity. ● High DC current gain : hFE=200 typ. ● Complementary to 2SC4177. APPLICATIONS ● Audio frequency general purpose amplifier applications.

文件：226.7 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M4；Package：SOT-323；PNP Plastic-Encapsulate Transistors

FEATURES ● High DC Current Gain ● High Voltage ● Complementary to 2SC4177

文件：1.60625 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：M4；Package：SOT-23；PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

文件：443.2 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：M4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

文件：253.17 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M4；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input OR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V (

文件：181.87 Kbytes 页数：10 Pages

TOSHIBA

东芝