UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

文件：216.43 Kbytes 页数：8 Pages

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安森美半导体

UB?뭆uffix Series CMOS Gates

文件：147.04 Kbytes 页数：7 Pages

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安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

文件：216.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

UB?뭆uffix Series CMOS Gates

文件：147.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

文件：194.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low Power dissipation and/or high noiseimmunity is desired. The UB set of CMOS gates areinverting non–buffered functions.\n• Supply

恩XP

Package：14-DIP（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NOR 4CH 2-INP 14DIP

ONSEMI

安森美半导体

Package：14-DIP（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NOR 4CH 2-INP 14DIP

ONSEMI

安森美半导体