B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSITORS

Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc • Pb−Free Pa

文件：241.69 Kbytes 页数：6 Pages

ONSEMI

安森美半导体