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MC14012BCL

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MC14012BCP

B?뭆uffixSeriesCMOSGates

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BCP

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0Vdcto18Vdc •All

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BCP

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MC14012BCPG

B?뭆uffixSeriesCMOSGates

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BCPG

Dual4-InputNANDGates

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BD

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MC14012BD

B-SuffixSeriesCMOSGates

TheBSerieslogicgatesareconstructedwithP−ChannelandN−Channelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. Features •SupplyVoltageRange=3.0Vdcto18Vdc •All

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BD

B?뭆uffixSeriesCMOSGates

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MC14012BDG

Dual4-InputNANDGates

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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