丝印：M4；Package：SOD-323；Silicon Planar Zener Diodes

Features Total power dissipation: Max. 500mW. Wide zener reverse voltage range 2.4V to 39V. Small plastic package suitable for surface mounted design. Tolerance approximately±5

文件：553.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：m4；Package：SOT1174-1；Dual supply translating transceiver; open drain; auto direction sensing

1. General description The NXS0104 is a 4-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 4-bit input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A

文件：334.6 Kbytes 页数：23 Pages

NEXPERIA

安世

丝印：M4；Package：XQFN12；Dual supply translating transceiver; open drain; auto direction sensing

1. General description The NXS0104-Q100 is a 4-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 4-bit input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)).

文件：319.83 Kbytes 页数：21 Pages

NEXPERIA

安世

丝印：m4；Package：SOT8019-1；Dual supply translating transceiver; open drain; auto direction sensing

1. General description The NXS0104 is a 4-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 4-bit input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A

文件：334.6 Kbytes 页数：23 Pages

NEXPERIA

安世

丝印：M4；Package：SOT883；60 V, 600 mA PNP switching transistor

1. General description PNP switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package. NPN complement: PMBT2222AM 2. Features and benefits • High current (max. 600 mA) • Low voltage (max. 60 V) • Leadless ultra small SMD plastic package

文件：222.72 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：M4；Package：SOT457；Low VF (MEGA) Schottky barrier diode

FEATURES •Low switching losses •Very high surge current absorption capability •Fast recovery time •Guard ring protected •Plastic SMD package. APPLICATIONS •Low power switched-mode power supplies •Rectification •Polarity protection. GENERAL DESCRIPTION Planar Schottky barrier diode e

文件：266.3 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：M4；Package：SOT23；N-channel TrenchMOS FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology 1.3 Ap

文件：600.77 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：M4；Package：WDFN-10L；3A, 1MHz, Synchronous Step-Down Converter

General Description The RT5771A is a high efficiency synchronous, step-down DC-DC converter. Its input voltage ranges from 2.7V to 5.5V that provides an adjustable regulated output voltage from 0.6V to VIN while delivering up to 3A of output current. The internal synchronous low on-resistance

文件：176.05 Kbytes 页数：13 Pages

RICHTEK

立锜科技

丝印：M4；Package：SMAF；Rectifier Diodes

文件：131.57 Kbytes 页数：3 Pages

KEXIN

科信电子

丝印：M4；Package：SMAF；Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A

文件：273.56 Kbytes 页数：3 Pages

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