LSH11N60E数据表ic资料库存现货无锡固电ISC-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
OM11N60	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
OM11N60SA	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商	etc2
OM11N60SA	文件：35.79 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They	IRF International Rectifier	IRF
PCFC11N60W	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
PSM11N60CT	文件：1.0463 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFC PFC Device Inc.	PFC
PSM11N60CTF	文件：1.045589 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFC PFC Device Inc.	PFC
SIHH11N60E	文件：197.47 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	LSH11N60E	XTW	24+	QFN	29122	绝对原厂支持只做自己现货优势	询价
贸泽芯城（深圳）电子科技有限公司	LSH11N65F	LONTEN	23+	TO-251	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市鹏顺微电子科技有限公司	LSH14LIGHT	帅福得	2022+	原厂原包装	6800	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市蓝山航业科技有限公司	LSH160182	mot	22+		500000	行业低价,代理渠道	询价
上海金庆电子技术有限公司	LSH1A	Honeywell	新		29	全新原装货期两周	询价
上海市鑫鸿达电子	LSH1A	Honeywell	2022+		25	全新原装货期两周	询价
深圳市科雨电子有限公司	LSH1A	HONEYWELL	20+	开关元件	96	就找我吧!--邀您体验愉快问购元件!	询价
深圳市粤科源兴科技有限公司	LSH20	SAFT	13+	QFN	18126	原装分销	询价
千层芯半导体(深圳)有限公司	LSH20	SAFT	2018+	LSH20	36000	进口原装现货假一赔十	询价
深圳市科恒伟业电子有限公司	LSH20	SAFT	1844+	LSH20	9852	只做原装正品假一赔十为客户做到零风险!!	询价

更多LSH11N60E供应商更新时间2024-9-22 8:30:00

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