| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN(RWH)；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06055 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN(RWH)；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06055 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN(RWH)；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06055 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN(RWH)；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06055 Mbytes 页数：35 Pages | TI 德州仪器 | TI | ||
丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design 文件：1.06054 Mbytes 页数：35 Pages | TI 德州仪器 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
QFN-32-EP(8x8) |
2317 |
深耕行业12年,可提供技术支持。 |
询价 | ||
TI(德州仪器) |
23+ |
N/A |
15912 |
代理渠道,价格优势 |
询价 | ||
TI/德州仪器 |
25+ |
VQFN32 |
15620 |
TI/德州仪器全新特价LMG3410R070RWHR即刻询购立享优惠#长期有货 |
询价 | ||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TI(德州仪器) |
2021+ |
VQFN-32(8x8) |
499 |
询价 | |||
TI/德州仪器 |
24+ |
VQFN-32 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
TI/德州仪器 |
25+ |
VQFN-32 |
8880 |
原装认准芯泽盛世！ |
询价 | ||
TI |
25+ |
VQFN (RWH) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI/德州仪器 |
23+ |
VQFN-32 |
5000 |
只有原装,欢迎来电咨询! |
询价 | ||
TI/德州仪器 |
21+ |
VQFN-32 |
9990 |
只有原装 |
询价 |
相关芯片丝印
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相关库存
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- LMG3522R030QRQSTQ1
- LMG3522R050RQST
- LMG3526R030RQST
- LMG3526R030RQSR.A
- LMG3526R030RQST.A
- LMG3526R050RQST
- LMG3612REQR
- LMG3612REQR.A
