丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design

文件：1.06054 Mbytes 页数：35 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；600-V 70-m(ohm) GaN with Integrated Driver and Protection

文件：1.40304 Mbytes 页数：32 Pages

TI

德州仪器

丝印：LMG3410R070；Package：VQFN；600-V 70-m(ohm) GaN with Integrated Driver and Protection

文件：1.40304 Mbytes 页数：32 Pages

TI

德州仪器