LMG3410R070RWHT.A中文资料德州仪器数据手册PDF规格书

1 Features

1• TI GaN Process Qualified Through Accelerated

Reliability In-application Hard-switching Mission

Profiles

• Enables High Density Power Conversion Designs

– Superior System Performance Over Cascode

or Stand-alone GaN FETs

– Low Inductance 8mm x 8mm QFN Package for

Ease of Design, and Layout

– Adjustable Drive Strength for Switching

Performance and EMI Control

– Digital Fault Status Output Signal

– Only +12 V Unregulated Supply Needed

• Integrated Gate Driver

– Zero Common Source Inductance

– 20 ns Propagation Delay for MHz Operation

– Process-tuned Gate Bias Voltage for Reliability

– 25 to 100V/ns User Adjustable Slew Rate

• Robust Protection

– Requires No External Protection Components

– Over-current Protection with <100ns Response

– >150V/ns Slew Rate Immunity

– Transient Overvoltage Immunity

– Overtemperature Protection

– UVLO Protection on All Supply Rails

• Device Options:

– LMG3410R070: Latched Overcurrent

Protection

– LMG3411R070: Cycle-by-cycle Overcurrent

Protection

2 Applications

• High Density Industrial and Consumer Power

Supplies

• Multi-level Converters

• Solar Inverters

• Industrial Motor Drives

• Uninterruptable Power Supplies

• High Voltage Battery Chargers

3 Description

The LMG341xR070 GaN power stage with integrated

driver and protection enables designers to achieve

new levels of power density and efficiency in power

electronics systems. The LMG341x’s inherent

advantages over silicon MOSFETs include ultra-low

input and output capacitance, zero reverse recovery

to reduce switching losses by as much as 80%, and

low switch node ringing to reduce EMI. These

advantages enable dense and efficient topologies like

the totem-pole PFC.

The LMG341xR070 provides a smart alternative to

traditional cascode GaN and standalone GaN FETs

by integrating a unique set of features to simplify

design, maximize reliability and optimize the

performance of any power supply. Integrated gate

drive enables 100V/ns switching with near zero Vds

ringing, <100 ns current limiting self-protects against

unintended shoot-through events, Overtemperature

shutdown prevents thermal runaway, and system

interface signals provide self-monitoring capability.