RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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STMICROELECTRONICS

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RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

ST

意法半导体

RF power transistor, LdmoST family

Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellen

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STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

文件：352.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST family

Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excell

文件：352.27 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体