RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. Features ■ Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 150

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STMICROELECTRONICS

意法半导体

150W 32V HF to 2GHz LDMOS TRANSISTOR in push-pull package

The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.\n • Excellent thermal stability\n• Common source configuration push-pull• POUT = 150 W with 20 dB gain @ 860 MHz\n• BeO-free package;

ST

意法半导体

Package：M246；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：MOSFET N-CH 80V 20A M-246

STMICROELECTRONICS

意法半导体

Low-Jitter, 10-Port LVDS Repeater

文件：204.91 Kbytes 页数：10 Pages

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美信

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文件：281.48 Kbytes 页数：36 Pages

PHI

PHI

Programmable deflection controller

文件：281.48 Kbytes 页数：36 Pages

PHI

PHI