RF POWER TRANSISTORS Ldmos Enhanced Technology

DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source

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STMICROELECTRONICS

意法半导体

30W 28V 2GHz LDMOS TRANSISTOR

ST

意法半导体

Package：M243；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 80V 2GHZ M243

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET20030S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2 GHz. LET20030S boasts the excellent

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STMICROELECTRONICS

意法半导体

Low Loss CWDM

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OPLINK

Low Loss CWDM

文件：351.5 Kbytes 页数：2 Pages

OPLINK