RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source m

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STMICROELECTRONICS

意法半导体

Package：M243；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：MOSFET N-CH 80V 9A M-250

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：202.3 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

文件：292.7 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体