45W 28V 2GHz LDMOS TRANSISTOR

The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. Excellent thermal stability\nCommon source configuration\nP\nOUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz\nP\nOUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz\nBeO free package\nIn compliance with the 2002/95/EC European directive;

ST

意法半导体

Excellent thermal stability

文件：632.4 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Package：M243；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET N CH 80V 12A M243

STMICROELECTRONICS

意法半导体

SCHOTTKY DIODES MODULE TYPE 200A

Features High Surge Capability Types Up to 100V VRRM

文件：121.24 Kbytes 页数：2 Pages

TEL

东电电子

180 Amp Schottky Rectifier

文件：118.17 Kbytes 页数：2 Pages

Microsemi

美高森美

200 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

文件：126.83 Kbytes 页数：3 Pages

MCC