LET20030C分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

LET20030C属于分立半导体产品的晶体管-FETMOSFET-射频。由意法半导体集团制造生产的LET20030C晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

DESCRIPTION

The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 applications

• IS-97 CDMA PERFORMANCES

POUT = 4.5 W

EFF. = 17

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 30 W with 11 dB gain @ 2000 MHz

• ESD PROTECTION