RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes 页数：12 Pages

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意法半导体

45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

• In compliance with the 2002/95/EC european directive\n• Excellent thermal stability\n• POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V• Common source configuration\n• ESD protection\n• Plastic package;

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意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANSISTOR RF POWER N-CH 80V 9A

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

Description The LET9045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045C is designed for high gain and broadband performance operating in common source m

文件：206.95 Kbytes 页数：10 Pages

STMICROELECTRONICS

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RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

DESCRIPTION The LET9045S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent ga

文件：292.7 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs

文件：202.3 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件：217.94 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

45W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package

The LET9045F is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9045F is designed for high gain and broadband performance operating in common source mode at 28 V. It • Excellent thermal stability\n• Common source configuration\n• POUT (@28 V) = 45 W with 18.5 dB gain @ 960 MHz• POUT (@36V) = 70 W with 18.5 dB gain @ 960 MHz\n• BeO free package\n• In compliance with the 2002/95/EC European directive;

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意法半导体