型号：STDLED525；Package：DPAK；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

型号：STFILED525；Package：TO-281；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

型号：STPLED525；Package：TO-220；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

型号：STULED525；Package：IPAK；N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very g

文件：1.62012 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

型号：LED525-66-60；High Power LED Array

文件：136.96 Kbytes 页数：2 Pages

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