丝印：LED624；Package：DPAK；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：LED624；Package：TO-281；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：LED624；Package：TO-220；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

丝印：LED624；Package：IPAK；N-channel 620 V, 2.2 Ω typ., 4.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages

Features • 100 avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior

文件：1.30766 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体