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LET9060S

丝印:LET9060S;Package:PowerSO-10RF;RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件:225.91 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

LET9060STR

丝印:LET9060S;Package:PowerSO-10RF;RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件:225.91 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

LET9060S

丝印:LET9060S;Package:PowerSO-10RF;RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件:225.91 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

LET9060STR

丝印:LET9060S;Package:PowerSO-10RF;RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件:225.91 Kbytes 页数:11 Pages

STMICROELECTRONICS

意法半导体

LET9060S

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

Description The LET9060 is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. LET9060 boasts the excellent gain,

文件:296.25 Kbytes 页数:10 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    LET9060S

  • 功能描述:

    射频MOSFET电源晶体管 RF PWR Trans LdmoST N-Ch 28V 1GHz ESD

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
ST
1129+
PowerSO-1
1400
优势
询价
STM
1809+
SOP-10
96
就找我吧!--邀您体验愉快问购元件!
询价
22+
NA
24
加我QQ或微信咨询更多详细信息,
询价
ST
22+
PowerSO10RF (Straight Lead)
9000
原厂渠道,现货配单
询价
ST/意法
23+
N
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ST
23+
PowerSO10RF (Straight Lead)
9000
原装正品,支持实单
询价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
STMicroelectronics
2022+
PowerSO-10RF(直引线)
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
STM
23+
10-SOIC
33500
原装正品现货库存QQ:2987726803
询价
STMicroelectronics
25+
PowerSO-10RF 裸露底部焊盘(2
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多LET9060S供应商 更新时间2025-9-20 10:12:00